III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

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III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the a...

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ژورنال

عنوان ژورنال: Scientific Reports

سال: 2016

ISSN: 2045-2322

DOI: 10.1038/srep22001